PBSS4350SPN,115 datasheet

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• Маркировка
  PBSS4350SPN,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS4350SPN,115 Collector- Emitter Voltage Vceo Max: 50 V Configuration: Dual Common Collector Current - Collector (ic) (max): 2.7A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: - ID_COMPONENTS: 1949669 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 2.7 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 750mW Power Dissipation: 1430 mW Series: - Transistor Polarity: NPN/PNP Transistor Type: NPN, PNP Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A Voltage - Collector Emitter Breakdown (max): 50V Other Names: 934061033115, PBSS4350SPN T/R
• Количество страниц
  19 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  138,21 KB

PBSS4350SPN,115 datasheet скачать

PBSS4350SPN,115 datasheet